Hock Jin QUAH_NACMP 2017

Biography
Dr. Hock Jin QUAH Universiti Sains Malaysia, Malaysia
Biography: Dr. Quah Hock Jin is a post-doctoral researcher in Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia (USM). He received his BEng (Hons) in Materials Engineering from School of Materials and Mineral Engineering (SMMRE), USM in 2008. He graduated with PhD (2014) and MSc (2010) in Electronics Materials from SMMRE, USM under the sponsorship of “The USM Vice Chancellor’s Award 2011” and “USM Fellowship”, respectively. Immediately after graduation, he was offered to join Institute of Advanced Technology, Universiti Putra Malaysia as a post-doctoral fellow. His research interest encompasses development of thin film technology and optimization of device performance based on high dielectric constant thin film materials as well as wide band gap semiconductors for potential applications in power electronics, solid-state lighting, and gas sensors. For years, he has actively involved in the growth of binary and ternary based thin film materials as passivation layers for GaN-, SiC-, Si-, and Ge-based metal-oxidesemiconductor (MOS) capacitors. In recent times, his research areas are widened to the growth and modification of GaN-based compound semiconductors using low cost route to study the aspects of optical performance and gas sensing behaviours point of view. His years of involvement in research and development (R&D) in the related field have enabled him to acquire considerable knowledge and analytical skills from various thin film analysis techniques for surface and interface quality assessment, chemical composition determination, and band gap engineering. In addition, he has the capability of extracting semiconductor materials’ electrical parameters using current-voltage and capacitance-voltage measurements performed at room temperature and high temperature. He is also able to deliver an understanding in current conduction mechanisms governing leakage current of the device and evaluating the location, density, and types of charges resided in the thin film and interfacial layer to correlate the thin film characteristics with electrical performance of the device in addition to identifying potential factor contributing to electrical degradation of the device. His contribution in R&D has been reflected by being rewarded with 2 patents filed under MyIPO and 42 refereed international top-tier journal publications with h-index of 12. He has also received several recognitions from the university under “Sanggar Sanjung” awards for year 2008, 2010, 2011, 2012, 2013, 2014, 2015, and 2016 as well as the “Best Thesis Award for Category of CRI: Engineering and Technology” for the year 2014. He is presently an editorial board member of “The Open Electrical & Electronic Engineering Journal (Bentham Open)” as well as reviewer for “Applied Surface Science, Journal of Alloys and Compounds, Sensors & Actuator A: Physical, Materials Research Bulletin, Superlattices and Microstructures, Materials Letters, Materials Science in Semiconductor Processing, Materials Science & Engineering B, Journal of Electronic Materials”.

Biography

Dr. Hock Jin QUAH
Universiti Sains Malaysia, Malaysia

Biography:
Dr. Quah Hock Jin is a post-doctoral researcher in Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia (USM). He received his BEng (Hons) in Materials Engineering from School of Materials and Mineral Engineering (SMMRE), USM in 2008. He graduated with PhD (2014) and MSc (2010) in Electronics Materials from SMMRE, USM under the sponsorship of “The USM Vice Chancellor’s Award 2011” and “USM Fellowship”, respectively. Immediately after graduation, he was offered to join Institute of Advanced Technology, Universiti Putra Malaysia as a post-doctoral fellow. His research interest encompasses development of thin film technology and optimization of device performance based on high dielectric constant thin film materials as well as wide band gap semiconductors for potential applications in power electronics, solid-state lighting, and gas sensors. For years, he has actively involved in the growth of binary and ternary based thin film materials as passivation layers for GaN-, SiC-, Si-, and Ge-based metal-oxidesemiconductor (MOS) capacitors. In recent times, his research areas are widened to the growth and modification of GaN-based compound semiconductors using low cost route to study the aspects of optical performance and gas sensing behaviours point of view. His years of involvement in research and development (R&D) in the related field have enabled him to acquire considerable knowledge and analytical skills from various thin film analysis techniques for surface and interface quality assessment, chemical composition determination, and band gap engineering. In addition, he has the capability of extracting semiconductor materials’ electrical parameters using current-voltage and capacitance-voltage measurements performed at room temperature and high temperature. He is also able to deliver an understanding in current conduction mechanisms governing leakage current of the device and evaluating the location, density, and types of charges resided in the thin film and interfacial layer to correlate the thin film characteristics with electrical performance of the device in addition to identifying potential factor contributing to electrical degradation of the device. His contribution in R&D has been reflected by being rewarded with 2 patents filed under MyIPO and 42 refereed international top-tier journal publications with h-index of 12. He has also received several recognitions from the university under “Sanggar Sanjung” awards for year 2008, 2010, 2011, 2012, 2013, 2014, 2015, and 2016 as well as the “Best Thesis Award for Category of CRI: Engineering and Technology” for the year 2014. He is presently an editorial board member of “The Open Electrical & Electronic Engineering Journal (Bentham Open)” as well as reviewer for “Applied Surface Science, Journal of Alloys and Compounds, Sensors & Actuator A: Physical, Materials Research Bulletin, Superlattices and Microstructures, Materials Letters, Materials Science in Semiconductor Processing, Materials Science & Engineering B, Journal of Electronic Materials”.