Diamond is a wide band gap semiconductor. It has some excellent basic physical properties, such as high breakdown field (~10 MV•cm-1), large hole mobility (3800 cm2·V-1·s-1), low dielectric constant (5.7), and high thermal conductively (22 W•cm-1•K-1). These properties make diamond suitable for the fabrication of high-power, high-frequency, and high-temperature electronic devices. 

Recently, diamond-based metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) have developed greatly. They were fabricated on p-type boron-doped oxygenated diamond (O-diamond) and hydrogenated diamond (H-diamond) channel layers.1,2 Although thermal stability of the O-diamond is believed better than that of the H-diamond, trap charge density at insulator/O-diamond interfaces and leakage current density of the O-diamond based MOS capacitors are very high. It is still difficult to fabricate high-performance O-diamond based MOSFETs. On the other hand, many successful diamond MOSFETs were fabricated on the H-diamond channel layers. The H-diamond epitaxial layer has a high surface conductivity. The holes are accumulated on the surface with the sheet hole density of 1012~1013 cm-2. Notably, it was reported that the exposure of the H-diamond in NO2 gas could increase the sheet hole density of H-diamond significantly to be as high as 1 × 1014 cm-2.3 Therefore, it is promising to fabricate high performance H-diamond based MOSFETs. 

In this talk, the fabrication of H-diamond based electronic devices such as MOSFETs and MOSFET logic circuits will be demonstrated and discussed.