Dr. Quah Hock Jin is a post-doctoral researcher in Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia (USM). He received his BEng (Hons) in Materials Engineering from School of Materials and Mineral Engineering (SMMRE), USM in 2008. He graduated with PhD (2014) and MSc (2010) in Electronics Materials from SMMRE, USM under the sponsorship of “The USM Vice Chancellor’s Award 2011” and “USM Fellowship”, respectively. Immediately after graduation, he was offered to join Institute of Advanced Technology, Universiti Putra Malaysia as a post-doctoral fellow. Currently, his research interests are focused on the formation of porous quaternary (AlxInyGazN) alloys and gallium nitride (GaN) as well as the growth of III-nitride compound semiconductors on bulk GaN for potential applications in solid-state lighting and gas sensor applications. Besides, he has vast experiences in exploiting high dielectric constant materials as passivation layer for GaN-, SiC-, Si-, and Ge-based metal-oxide-semiconductor (MOS) capacitors. From these research works, he has published 42 refereed international top-tier journals with h-index of 12 and received several recognitions from the university under “Sanggar Sanjung” awards for year 2008, 2010, 2011, 2012, 2013, 2014, 2015, and 2016. In addition, he was awarded the “Best Thesis Award for Category of CRI: Engineering and Technology,” for the year 2014 from USM.