Biography
Transition metal silicides have played an indispensable role in the development of microelectronics. In microelectronic devices, metal silicides, e.g., titanium silicide, nickel silicide, cobalt silicide etc. are used as interconnects, Ohmic contacts, Schottky barrier contacts, and gate electrodes. Synthesis and properties of nanoscale metal silicides on silicon are of tremendous current interest for applications in nanoelectronics. With the dimensions of the nanostructures in the quantum regime it is possible to enter into the realm of quantum devices. We first address the growth of self-organized quantum wires and the fundamental physics behind it with an example of CoSi2 growth on Si surfaces [1, 2]. Next we will discuss a case of aligned FeSi2 nanowire growth utilizing the two-fold symmetry of a Si(110) substrate [3]. These materials have been grown in a molecular beam epitaxy (MBE) system using reactive deposition epitaxy (RDE), where sub-monolayers of metal were deposited on hot Si substrates and the nanostructures have grown in a self-organized way. A proposal for the fabrication of a nanoscale lateral permeable base transistor will be discussed. Finally, a case of nickel monosilicide (NiSi) growth via ion irradiation will be discussed. NiSi has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal oxide semiconductor (CMOS) technology [4]. However, there are major experimental challenges in growing uniform single phase nickel monosilide on silicon. We show that these challenges can be overcome and a uniform nanoscale single phase NiSi film can be grown by irradiating a Ni film, grown on Si, with an energetic ion beam at room temperature.
References
[1] J. C. Mahato, Debolina Das, R. R. Juluri, R. Batabyal, Anupam Roy, P. V. Satyam, and B. N. Dev, Appl. Phys. Lett. 100 (2012) 263117.
[2] J.C. Mahato, Debolina Das, Anupam Roy, R. Batabyal, R.R. Juluri, P.V. Satyam, B.N. Dev, Thin Solid Films 534 (2013) 296.
[3] Debolina Das, J. C. Mahato, Bhaskar Bisi, B. Satpati, and B. N. Dev, Appl. Phys. Lett. 105 (2014) 191606.
[4] R. Doering and Y. Nishi (Eds.), Handbook of Semiconductor Manufacturing Technology (Second edition), CRC Press, Chapter 10, (2008).