American Journal of Analytical ChemistryGrapheneJournal of Minerals and Materials Characterization and EngineeringJournal of Materials Science and Chemical Engineering

Hot Links >>


Conference >>


For Participants >>



Bhupendra N. Dev
Bhupendra N. Dev
Indian Association for the Cultivation of Science, India
Self-organized epitaxial metal silicide nanostructures on silicon surfaces


Transition metal silicides have played an indispensable role in the development of microelectronics. In microelectronic devices, metal silicides, e.g., titanium silicide, nickel silicide, cobalt silicide etc. are used as interconnects, Ohmic contacts, Schottky barrier contacts, and gate electrodes. Synthesis and properties of nanoscale metal silicides on silicon are of tremendous current interest for applications in nanoelectronics. With the dimensions of the nanostructures in the quantum regime it is possible to enter into the realm of quantum devices. We first address the growth of self-organized quantum wires and the fundamental physics behind it with an example of CoSi2 growth on Si surfaces [1, 2]. Next we will discuss a case of aligned FeSi2 nanowire growth utilizing the two-fold symmetry of a Si(110) substrate [3]. These materials have been grown in a molecular beam epitaxy (MBE) system using reactive deposition epitaxy (RDE), where sub-monolayers of metal were deposited on hot Si substrates and the nanostructures have grown in a self-organized way. A proposal for the fabrication of a nanoscale lateral permeable base transistor will be discussed. Finally, a case of nickel monosilicide (NiSi) growth via ion irradiation will be discussed. NiSi has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal oxide semiconductor (CMOS) technology [4]. However, there are major experimental challenges in growing uniform single phase nickel monosilide on silicon. We show that these challenges can be overcome and a uniform nanoscale single phase NiSi film can be grown by irradiating a Ni film, grown on Si, with an energetic ion beam at room temperature. 


[1] J. C. Mahato, Debolina Das, R. R. Juluri, R. Batabyal, Anupam Roy, P. V. Satyam, and B. N. Dev, Appl. Phys. Lett. 100 (2012) 263117. 

[2] J.C. Mahato, Debolina Das, Anupam Roy, R. Batabyal, R.R. Juluri, P.V. Satyam, B.N. Dev, Thin Solid Films 534 (2013) 296. 

[3] Debolina Das, J. C. Mahato, Bhaskar Bisi, B. Satpati, and B. N. Dev, Appl. Phys. Lett. 105 (2014) 191606. 

[4] R. Doering and Y. Nishi (Eds.), Handbook of Semiconductor Manufacturing Technology (Second edition), CRC Press, Chapter 10, (2008).

Prof. Dev is a Senior Professor in the Department of Materials Science at Indian Association for the Cultivation of Science, Kolkata. He received Ph.D. in Physics (1985) from the State University of New York at Albany, USA. He worked as a Guest Scientist at Hamburg Synchrotron Radiation Laboratory (HASYLAB) at DESY in Hamburg, Germany and then returned to India and joined Institute of Physics (IOP), Bhubaneswar in 1988. There he set up a research program on clean surfaces of materials under ultrahigh vacuum (UHV) condition in the broad area of “Surface and Nanoscale Science”. In 2006 Prof. Dev moved to Indian Association for the Cultivation of Science (IACS), Kolkata. Prof. Dev set up several world class research facilities in IOP as well as at IACS. He designed the most compact molecular beam epitaxy (MBE) facility. At IACS he set up an integrated facility including MBE, STM and photoemission electron microscopy (PEEM). Prof, Dev’s major areas of research have been ion-solid interactions, X-ray physics and epitaxial nanostructures on surfaces. He has supervised 19 Ph.D. theses and published about 150 papers in peer reviewed international journals. Prof. Dev is a member of Editorial or Advisory Editorial Board of several international journals. As principal investigator, he has carried out international bilateral Indo-US, Indo-German and Indo-Japan collaborative research projects. Prof. Dev is a Fellow of the Indian Academy of Sciences and National Academy of Sciences India. Among the many awards Prof. Dev received, is the 2010 International Alumni Award for Exceptional Achievement from the University at Albany, State University of New York, U.S.A. He received the Materials Research Society of India Distinguished Lectureship Award for 2015-16.
Home | About Engii | Contact Us
Copyright © 2007 - 2017 Engineering Information Institute. All rights reserved.