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Biography


Prof. Andrey L. Stepanov
Kazan Physical-Technical Institute of Russian Academy of Sciences, Russia
Title:
Formation of porous silicon by Ag+-ion implantation
Abstract:
Porous materials have attracted remarkable concerns and found tremendous importance widespread in both fundamental research and industrial applications. Such materials could be widely used for variety applications as absorbents, lightings, catalysts, and for biological molecular filtration and isolation. One quite known method for preparation of porous semiconductor structures is ion implantation, which was successfully used to create porous germanium layers by Ge+-, Bi+- and Sn+-ion irradiation of crystalline germanium substrates. It was also shown that ion implantation suited to produce porous structures in amorphous germanium and SiGe (90% of germanium) alloys thin films. Ion implantation is a well established and all over the world accessible technique, being mainly used for semiconductor microelectronic device fabrication. Unfortunately, a possibility about porous silicon (PSi) fabrication using ion implantation was not completely studied now. At modern time PSi is considering as a key material in many industrial sectors such as electronics, sensors and photonics. In general, there were only two main technological methods for production of PSi structures – electrochemical etching and chemical stain etching. Additionally, the interest to PSi nanostructures containing noble metal nanoparticles was recently found. Silver nanoparticles are the subject of specific increasing interests due to their strongest plasmon resonance in the visible spectrum. At the present report a novel technological approach based on low-energy ion implantation is suggested and realized to create PSi layers on the crystalline surface of Si wafers. It is demonstrated that using high-dose Ag-ion implantation of silicon with the energy of 30 keV the surface PSi structures with silver nanoparticles can be successfully fabricated.
Biography:
Andrey L. Stepanov was born in Kazan, Russia (USSR), in 1963. He received the Physical-Mathematical degree, the Ph.D. and Dr. Sci. degrees from the Kazan Federal University, Kazan, Russia, in 1985, 1991 and 2009, respectively. Since 1992, A. Stepanov is with Kazan Physical-Technical Institute, Russian Academy of Sciences. In 1997-1999, he was a Research Fellow at the Sussex University, Brighton, UK with the support from the Royal Society/NATO. From 1999 to 2003, A. Stepanov was a Research Fellow of the RWTH Aachen University in Germany with support from the Alexander von Humboldt Foundation. During 2003-2004 he was granted by Lise Meitner Fellowship from Austrian Scientific Society to stay in Karl-Franzens-University in Graz, Austria. From 2004 to 2011. A. Stepanov was a Visiting Research Fellow in Laser Zentrum Hannover in Germany with support from the DAAD, DFG and the AvH. From 2009 he is in Kazan Federal University, Russia. From 2010 to 2012 he got a professorship in the Kazan National Research Technological University, Russia. In 2013, he was granted by the National Scholarship of the Slovak Republic. Main research subjects of his interest are Nanooptics, Nanoplasmonics, Nanophotonics, Metal nanoparticles, Nonlinear optics, Laser annealing and Ion implantation. He has more then 200 publications in periodic journals, 10 patents, more than 18 invited book chapters and 3 monographs. According of the ISI Web of Knowledge database A. Stepanov has more then 2500 citations in scientific publications and his Hirsch index is 27.
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